1 power transistors 2sC3944, 2sC3944a silicon npn epitaxial planar type for low-frequency driver and high power amplification complementary to 2sa1535 and 2sa1535a n features l satisfactory foward current transfer ratio h fe vs. collector cur- rent i c characteristics l high transition frequency f t l makes up a complementary pair with 2sa1535 and 2sa1535a, which is optimum for the driver-stage of a 60 to 100w output amplifier l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 150 180 150 180 5 1.5 1 15 2.0 150 C55 to +150 unit v v v a a w ?c ?c 2sC3944 2sC3944a 2sC3944 2sC3944a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current collector to base voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance symbol i cbo v ceo v ebo h fe1 * h fe2 v ce(sat) v be(sat) f t c ob conditions v cb = 150v, i e = 0 v cb = 180v, i e = 0 i c = 1ma, i b = 0 i e = 10 m a, i c = 0 v ce = 10v, i c = 150ma v ce = 5v, i c = 500ma i c = 500ma, i b = 50ma i c = 500ma, i b = 50ma v cb = 10v, i e = C50ma, f = 10mhz v cb = 10v, i e = 0, f = 1mhz min 150 180 5 95 50 typ 160 100 0.5 1 200 30 max 10 10 220 2 2 50 unit m a v v v v mhz pf 2sC3944 2sC3944a 2sC3944 2sC3944a * h fe1 rank classification rank q r h fe1 95 to 155 130 to 220 unit: mm 1:base 2:collector 3:emitter toC220 full pack package(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 f 3.1 0.1
2 power transistors 2sC3944, 2sC3944a p c ta v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 25 20 15 10 5 t c =ta ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0.01 0.1 1 0.03 0.3 0.01 10 1 0.1 0.03 0.3 3 i c /i b =10 ?5?c 25?c t c =100?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 0.03 0.3 0.01 10 1 0.1 0.03 0.3 3 i c /i b =10 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 0.03 0.3 1 1000 100 10 3 30 300 v ce =10v t c =100?c ?5?c 25?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.03 ?0.1 ?0.3 ? 0 400 300 100 200 v cb =10v f=10mhz t c =25?c emitter current i e ( a ) transition frequency f t ( mhz ) 1 3 10 30 100 0 100 80 60 40 20 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 single pulse t c =25?c t=10ms t=<50 s 2sC3944a 2sC3944 dc i cp i c 1ms collector to emitter voltage v ce ( v ) collector current i c ( a )
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